NVMFWD027N10MCLT1G onsemi
Виробник: onsemi
Description: DUAL N-CHANNEL POWER MOSFET100 V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Відгуки про товар
Написати відгук
Технічний опис NVMFWD027N10MCLT1G onsemi
Description: DUAL N-CHANNEL POWER MOSFET100 V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 46W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V, Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 38µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFWD027N10MCLT1G за ціною від 35.89 грн до 92.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVMFWD027N10MCLT1G | onsemi |
Description: DUAL N-CHANNEL POWER MOSFET100 V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 46W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
NVMFWD027N10MCLT1G | onsemi |
MOSFETs Dual N-Channel Power MOSFET 100 V, 28 A, 26 mohm Wettable Flank option |
на замовлення 1050 шт: термін постачання 21-30 дні (днів) |
|
| NVMFWD027N10MCLT1G |
|
Виробник: onsemi
Description: DUAL N-CHANNEL POWER MOSFET100 V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: DUAL N-CHANNEL POWER MOSFET100 V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.77 грн |
| 10+ | 62.41 грн |
| 25+ | 56.49 грн |
| 100+ | 46.96 грн |
| 250+ | 44.07 грн |
| 500+ | 42.33 грн |
| NVMFWD027N10MCLT1G |
|
Виробник: onsemi
MOSFETs Dual N-Channel Power MOSFET 100 V, 28 A, 26 mohm Wettable Flank option
MOSFETs Dual N-Channel Power MOSFET 100 V, 28 A, 26 mohm Wettable Flank option
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 92.06 грн |
| 10+ | 65.93 грн |
| 100+ | 46.02 грн |
| 500+ | 41.41 грн |
| 1000+ | 41.20 грн |
| 1500+ | 38.06 грн |
| 3000+ | 35.89 грн |