на замовлення 1454 шт:
термін постачання 126-135 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 254.91 грн |
| 10+ | 211.51 грн |
| 25+ | 173.62 грн |
| 100+ | 147.87 грн |
| 250+ | 140.52 грн |
| 500+ | 132.42 грн |
| 1000+ | 113.30 грн |
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Технічний опис NVMFWS002N10MCLT1G onsemi
Description: PTNG 100V LL SO8FL HE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 194W (Tc), Vgs(th) (Max) @ Id: 3V @ 351µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції NVMFWS002N10MCLT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVMFWS002N10MCLT1G | Виробник : ONSEMI |
 NVMFWS002N10MCLT1G SMD N channel transistors |
товару немає в наявності |
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NVMFWS002N10MCLT1G | Виробник : onsemi |
Description: PTNG 100V LL SO8FL HE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 3V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
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NVMFWS002N10MCLT1G | Виробник : onsemi |
Description: PTNG 100V LL SO8FL HE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 3V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |