NVMFWS004N10MCT1G onsemi

Description: MOSFET N-CH 100V 5DFN, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 4V @ 270µA, Power Dissipation (Max): 3.8W (Ta), 164W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc), FET Type: N-Channel, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).