NVMFWS016N06CT1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
| Кількість | Ціна |
|---|---|
| 1500+ | 44.69 грн |
| 3000+ | 39.99 грн |
| 4500+ | 39.63 грн |
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Технічний опис NVMFWS016N06CT1G onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 25µA, Power Dissipation (Max): 3.4W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції NVMFWS016N06CT1G за ціною від 47.50 грн до 152.24 грн
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NVMFWS016N06CT1G | onsemi |
Description: MOSFET N-CH 60V 10A/33A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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| NVMFWS016N06CT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 152.24 грн |
| 10+ | 93.61 грн |
| 100+ | 63.49 грн |
| 500+ | 47.50 грн |