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NVMFWS021N10MCLT1G

NVMFWS021N10MCLT1G onsemi

nvmfs021n10mcl-d.pdf
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 1500 шт
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Технічний опис NVMFWS021N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 3V @ 42µA, Power Dissipation (Max): 3.6W (Ta), 49W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

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NVMFWS021N10MCLT1G onsemi nvmfs021n10mcl-d.pdf MOSFETs PTNG 100V LL SO8FL
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NVMFWS021N10MCLT1G ONSEMI nvmfs021n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 159A; 24W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 23mΩ
Mounting: SMD
Pulsed drain current: 159A
Power dissipation: 24W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
NVMFWS021N10MCLT1G nvmfs021n10mcl-d.pdf
Виробник: onsemi
MOSFETs PTNG 100V LL SO8FL
товару немає в наявності
В кошику  од. на суму  грн.
NVMFWS021N10MCLT1G nvmfs021n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 159A; 24W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 23mΩ
Mounting: SMD
Pulsed drain current: 159A
Power dissipation: 24W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.