NVMFWS021N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 3V @ 42µA, Power Dissipation (Max): 3.6W (Ta), 49W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.