NVMFWS0D4N04XMT1G onsemi
Виробник: onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 164.47 грн |
3000+ | 149.13 грн |
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Технічний опис NVMFWS0D4N04XMT1G onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 519A (Tc), Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 330µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V.
Інші пропозиції NVMFWS0D4N04XMT1G за ціною від 145.84 грн до 345.73 грн
Фото | Назва | Виробник | Інформація |
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NVMFWS0D4N04XMT1G | Виробник : onsemi |
Description: 40V T10M IN S08FL GEN 2 PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 519A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS0D4N04XMT1G | Виробник : onsemi | MOSFET 40V T10M IN S08FL GEN 2 PACKAGE |
на замовлення 1370 шт: термін постачання 266-275 дні (днів) |
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NVMFWS0D4N04XMT1G | Виробник : ON Semiconductor | NVMFWS0D4N04XMT1G |
товар відсутній |
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NVMFWS0D4N04XMT1G | Виробник : ON Semiconductor | Power MOSFET, Single N-Channel |
товар відсутній |