NVMFWS1D7N04XMT1G onsemi
Виробник: onsemiDescription: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 45.48 грн |
| 3000+ | 42.64 грн |
| 4500+ | 42.06 грн |
| 7500+ | 38.86 грн |
| 10500+ | 38.51 грн |
| 15000+ | 38.17 грн |
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Технічний опис NVMFWS1D7N04XMT1G onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 154A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 70µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVMFWS1D7N04XMT1G за ціною від 38.26 грн до 163.49 грн
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NVMFWS1D7N04XMT1G | Виробник : onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 22445 шт: термін постачання 21-31 дні (днів) |
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NVMFWS1D7N04XMT1G | Виробник : onsemi |
MOSFETs 40V T10M IN SO8FL PACKAGE |
на замовлення 8049 шт: термін постачання 21-30 дні (днів) |
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