на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 298.69 грн |
| 10+ | 192.05 грн |
| 25+ | 152.29 грн |
| 100+ | 116.97 грн |
| 250+ | 108.15 грн |
| 500+ | 95.64 грн |
| 1000+ | 89.75 грн |
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Технічний опис NVMFWS1D9N08XT1G onsemi
Description: T10 80V STD NCH MOSFET SO8FL PRE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 201A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 164W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 252µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVMFWS1D9N08XT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVMFWS1D9N08XT1G | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 80V 201A |
товару немає в наявності |
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| NVMFWS1D9N08XT1G | Виробник : ONSEMI |
NVMFWS1D9N08XT1G SMD N channel transistors |
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NVMFWS1D9N08XT1G | Виробник : onsemi |
Description: T10 80V STD NCH MOSFET SO8FL PRE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
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NVMFWS1D9N08XT1G | Виробник : onsemi |
Description: T10 80V STD NCH MOSFET SO8FL PRE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |