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NVMFWS2D1N08XT1G

NVMFWS2D1N08XT1G onsemi

nvmfws2d1n08x-d.pdf
Виробник: onsemi
MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF
на замовлення 1765 шт:
термін постачання 21-30 дні (днів)
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Технічний опис NVMFWS2D1N08XT1G onsemi

Description: T10 80V STD NCH MOSFET SO8FL PRE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 181A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 213µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V, Qualification: AEC-Q101.

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NVMFWS2D1N08XT1G NVMFWS2D1N08XT1G onsemi nvmfws2d1n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL PRE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 213µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1500 шт
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NVMFWS2D1N08XT1G NVMFWS2D1N08XT1G onsemi nvmfws2d1n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL PRE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 213µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
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NVMFWS2D1N08XT1G ONSEMI nvmfws2d1n08x-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 761A
Power dissipation: 148W
Gate charge: 53nC
Drain current: 181A
Kind of channel: enhancement
Drain-source voltage: 80V
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 2.1mΩ
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NVMFWS2D1N08XT1G nvmfws2d1n08x-d.pdf
NVMFWS2D1N08XT1G
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL PRE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 213µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFWS2D1N08XT1G nvmfws2d1n08x-d.pdf
NVMFWS2D1N08XT1G
Виробник: onsemi
Description: T10 80V STD NCH MOSFET SO8FL PRE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 213µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVMFWS2D1N08XT1G nvmfws2d1n08x-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 761A
Power dissipation: 148W
Gate charge: 53nC
Drain current: 181A
Kind of channel: enhancement
Drain-source voltage: 80V
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 2.1mΩ
товару немає в наявності
В кошику  од. на суму  грн.