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NVMFWS2D3N04XMT1G onsemi

Name: NVMFWS2D3N04XMT1G
Brand: onsemi
SKU: 34053046-4
Price: 371.52 UAH
Availability: InStock

Виробник: onsemi
MOSFETs 40V T10M IN S08FL PACKAGE

на замовлення 823 шт:

термін постачання 21-30 дні (днів)

Кількість	Ціна
3+	123.84 грн
10+	92.21 грн
100+	62.85 грн
500+	53.23 грн
1000+	47.81 грн
1500+	40.55 грн

Мінімальне замовлення: 3

В кошику од. на суму грн.

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Технічний опис NVMFWS2D3N04XMT1G onsemi

Description: 40V T10M IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції NVMFWS2D3N04XMT1G

Назва	Виробник	Інформація	Доступність	Ціна
NVMFWS2D3N04XMT1G	Виробник : onsemi	Description: 40V T10M IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
NVMFWS2D3N04XMT1G	Виробник : onsemi	Description: 40V T10M IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
NVMFWS2D3N04XMT1G	Виробник : ONSEMI	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 121A Pulsed drain current: 688A Power dissipation: 63W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.35mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.