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NVMFWS2D3N04XMT1G

NVMFWS2D3N04XMT1G onsemi

nvmfws2d3n04xm-d.pdf
Виробник: onsemi
MOSFETs 40V T10M IN S08FL PACKAGE
на замовлення 3314 шт:
термін постачання 21-30 дні (днів)
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3+148.84 грн
10+93.21 грн
100+54.34 грн
500+44.54 грн
1000+39.47 грн
1500+37.29 грн
3000+35.38 грн
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Технічний опис NVMFWS2D3N04XMT1G onsemi

Description: 40V T10M IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V, Qualification: AEC-Q101.

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NVMFWS2D3N04XMT1G NVMFWS2D3N04XMT1G onsemi nvmfws2d3n04xm-d.pdf Description: 40V T10M IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1500 шт
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NVMFWS2D3N04XMT1G NVMFWS2D3N04XMT1G onsemi nvmfws2d3n04xm-d.pdf Description: 40V T10M IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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NVMFWS2D3N04XMT1G ONSEMI nvmfws2d3n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 22.2nC
Power dissipation: 63W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
On-state resistance: 2.35mΩ
Polarisation: unipolar
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NVMFWS2D3N04XMT1G nvmfws2d3n04xm-d.pdf
NVMFWS2D3N04XMT1G
Виробник: onsemi
Description: 40V T10M IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFWS2D3N04XMT1G nvmfws2d3n04xm-d.pdf
NVMFWS2D3N04XMT1G
Виробник: onsemi
Description: 40V T10M IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVMFWS2D3N04XMT1G nvmfws2d3n04xm-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 22.2nC
Power dissipation: 63W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
On-state resistance: 2.35mΩ
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.