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NVMFWS3D6N10MCLT1G

NVMFWS3D6N10MCLT1G onsemi

NVMFS3D6N10MCL-D.PDF
Виробник: onsemi
MOSFETs Single N-Channel Power MOSFET 100 V, 131 A, 3.6mohm
на замовлення 11698 шт:
термін постачання 21-30 дні (днів)
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Технічний опис NVMFWS3D6N10MCLT1G onsemi

Description: PTNG 100V LL NCH SO-8FL WETTABLE, Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 3V @ 270µA, Power Dissipation (Max): 3.2W (Ta), 139W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

Інші пропозиції NVMFWS3D6N10MCLT1G

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
NVMFWS3D6N10MCLT1G NVMFWS3D6N10MCLT1G onsemi nvmfs3d6n10mcl-d.pdf Description: PTNG 100V LL NCH SO-8FL WETTABLE
Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 270µA
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFWS3D6N10MCLT1G NVMFWS3D6N10MCLT1G onsemi nvmfs3d6n10mcl-d.pdf Description: PTNG 100V LL NCH SO-8FL WETTABLE
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 270µA
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
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NVMFWS3D6N10MCLT1G ONSEMI nvmfs3d6n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 3.6mΩ
Mounting: SMD
Pulsed drain current: 888A
Power dissipation: 69W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
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NVMFWS3D6N10MCLT1G nvmfs3d6n10mcl-d.pdf
NVMFWS3D6N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL NCH SO-8FL WETTABLE
Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 270µA
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFWS3D6N10MCLT1G nvmfs3d6n10mcl-d.pdf
NVMFWS3D6N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL NCH SO-8FL WETTABLE
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 270µA
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
NVMFWS3D6N10MCLT1G nvmfs3d6n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 3.6mΩ
Mounting: SMD
Pulsed drain current: 888A
Power dissipation: 69W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.