NVMFWS3D6N10MCLT1G onsemi
Виробник: onsemi
Description: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 118.79 грн |
3000+ | 107.71 грн |
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Технічний опис NVMFWS3D6N10MCLT1G onsemi
Description: PTNG 100V LL NCH SO-8FL WETTABLE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V, Power Dissipation (Max): 3.2W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 3V @ 270µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFWS3D6N10MCLT1G за ціною від 125.37 грн до 252 грн
Фото | Назва | Виробник | Інформація |
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NVMFWS3D6N10MCLT1G | Виробник : onsemi |
Description: PTNG 100V LL NCH SO-8FL WETTABLE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9069 шт: термін постачання 21-31 дні (днів) |
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NVMFWS3D6N10MCLT1G | Виробник : onsemi | MOSFET PTNG 100V LL NCH SO-8FL WETTABLE FLANK FOR AUTOMOTIVE MARKET |
на замовлення 13795 шт: термін постачання 21-30 дні (днів) |
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NVMFWS3D6N10MCLT1G | Виробник : ON Semiconductor | Single N Channel Power MOSFET 100 V, 131 A, 3.6m |
товар відсутній |