NVMFWS9D6P04M8LT1G onsemi
Виробник: onsemi
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Технічний опис NVMFWS9D6P04M8LT1G onsemi
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 2.4V @ 580µA, Power Dissipation (Max): 3.7W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Інші пропозиції NVMFWS9D6P04M8LT1G за ціною від 37.57 грн до 161.76 грн
| Фото | Назва | Виробник | Інформація |
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NVMFWS9D6P04M8LT1G | onsemi |
MOSFETs MV8 P-CH 40V SO-8FL PORTFOLIO EXPANSION |
на замовлення 1446 шт: термін постачання 21-30 дні (днів) |
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NVMFWS9D6P04M8LT1G | onsemi |
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 2825 шт: термін постачання 21-31 дні (днів) |
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| NVMFWS9D6P04M8LT1G |
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Виробник: onsemi
MOSFETs MV8 P-CH 40V SO-8FL PORTFOLIO EXPANSION
MOSFETs MV8 P-CH 40V SO-8FL PORTFOLIO EXPANSION
на замовлення 1446 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 129.92 грн |
| 10+ | 86.73 грн |
| 100+ | 51.59 грн |
| 500+ | 46.87 грн |
| 1000+ | 42.22 грн |
| 1500+ | 39.47 грн |
| 3000+ | 37.57 грн |
| NVMFWS9D6P04M8LT1G |
|
Виробник: onsemi
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 161.76 грн |
| 10+ | 97.20 грн |
| 25+ | 81.88 грн |
| 100+ | 60.59 грн |
| 250+ | 52.61 грн |
| 500+ | 47.70 грн |