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NVMJD010N10MCLTWG

NVMJD010N10MCLTWG onsemi

nvmjd010n10mcl-d.pdf
Виробник: onsemi
MOSFETs PTNG 100V N-CH LL IN LFPAK56 DUALS PACKAGE
на замовлення 646 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
2+225.31 грн
10+145.09 грн
100+87.40 грн
500+74.01 грн
3000+69.07 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис NVMJD010N10MCLTWG onsemi

Description: PTNG 100V N-CH LL IN LFPAK56 DUA, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 84W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V, Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 97µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції NVMJD010N10MCLTWG

Фото Назва Виробник Інформація Доступність Ціна
NVMJD010N10MCLTWG NVMJD010N10MCLTWG onsemi nvmjd010n10mcl-d.pdf Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVMJD010N10MCLTWG NVMJD010N10MCLTWG onsemi nvmjd010n10mcl-d.pdf Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVMJD010N10MCLTWG nvmjd010n10mcl-d.pdf
NVMJD010N10MCLTWG
Виробник: onsemi
Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVMJD010N10MCLTWG nvmjd010n10mcl-d.pdf
NVMJD010N10MCLTWG
Виробник: onsemi
Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.