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NVMJS0D9N04CLTWG onsemi

Name: NVMJS0D9N04CLTWG
Brand: onsemi
SKU: 60461667-3
Price: 436.18 UAH
Availability: InStock

Виробник: onsemi
Description: MOSFET N-CH 40V 50A/330A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101

на замовлення 2987 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна
2+	218.09 грн
10+	143.90 грн
100+	104.13 грн
500+	81.27 грн
1000+	79.14 грн

Мінімальне замовлення: 2

В кошику од. на суму грн.

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Технічний опис NVMJS0D9N04CLTWG onsemi

Description: MOSFET N-CH 40V 50A/330A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc), Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 190µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції NVMJS0D9N04CLTWG

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	NVMJS0D9N04CLTWG	Виробник : onsemi	Description: MOSFET N-CH 40V 50A/330A 8LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 190µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
	NVMJS0D9N04CLTWG	Виробник : ONSEMI	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.