NVMJS0D9N04CLTWG onsemi
Виробник: onsemiDescription: MOSFET N-CH 40V 50A/330A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2987 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 209.59 грн |
| 10+ | 138.30 грн |
| 100+ | 100.07 грн |
| 500+ | 78.11 грн |
| 1000+ | 76.06 грн |
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Технічний опис NVMJS0D9N04CLTWG onsemi
Description: MOSFET N-CH 40V 50A/330A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc), Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 190µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVMJS0D9N04CLTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVMJS0D9N04CLTWG | Виробник : ONSEMI |
NVMJS0D9N04CLTWG SMD N channel transistors |
товару немає в наявності |
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NVMJS0D9N04CLTWG | Виробник : onsemi |
Description: MOSFET N-CH 40V 50A/330A 8LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 190µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |