NVMJS1D0N04CTWG onsemi
Виробник: onsemiDescription: MOSFET N-CH 40V 46A/300A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 267.02 грн |
| 10+ | 167.85 грн |
| 100+ | 117.07 грн |
| 500+ | 89.51 грн |
| 1000+ | 82.97 грн |
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Технічний опис NVMJS1D0N04CTWG onsemi
Description: MOSFET N-CH 40V 46A/300A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 166W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 190µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVMJS1D0N04CTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVMJS1D0N04CTWG | Виробник : ON Semiconductor |
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на замовлення 2990 шт: термін постачання 14-28 дні (днів) |
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NVMJS1D0N04CTWG | Виробник : onsemi |
Description: MOSFET N-CH 40V 46A/300A 8LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 190µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Qualification: AEC-Q101 |
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