NVMJS1D7N04CTWG onsemi

Description: MOSFET N-CH 40V 35A/185A 8LFPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 3.5V @ 130µA, Power Dissipation (Max): 3.8W (Ta), 106W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).