NVMJS2D5N06CLTWG onsemi

Description: MOSFET N-CH 60V 31A/164A 8LFPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 2V @ 135µA, Power Dissipation (Max): 3.9W (Ta), 113W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).