NVMJST0D9N04CTXG onsemi
Виробник: onsemiDescription: TRENCH 6 40V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 531A (Tc)
Rds On (Max) @ Id, Vgs: 1.07mOhm @ 50A, 10V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2568 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 338.01 грн |
| 10+ | 210.90 грн |
| 25+ | 181.14 грн |
| 100+ | 138.42 грн |
| 250+ | 122.91 грн |
| 500+ | 113.37 грн |
| 1000+ | 103.90 грн |
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Технічний опис NVMJST0D9N04CTXG onsemi
Description: TRENCH 6 40V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 531A (Tc), Rds On (Max) @ Id, Vgs: 1.07mOhm @ 50A, 10V, Power Dissipation (Max): 555W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 190µA, Supplier Device Package: 10-TCPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMJST0D9N04CTXG
| Фото | Назва | Виробник | Інформація |
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NVMJST0D9N04CTXG | Виробник : onsemi |
Description: TRENCH 6 40V LFPAK 5X7 Packaging: Tape & Reel (TR) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 531A (Tc) Rds On (Max) @ Id, Vgs: 1.07mOhm @ 50A, 10V Power Dissipation (Max): 555W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 190µA Supplier Device Package: 10-TCPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVMJST0D9N04CTXG | Виробник : onsemi |
MOSFETs Single N-Channel Power MOSFET 40V, 300A, 1 mohm on Top Cool Package |
товару немає в наявності |