NVMJST1D6N04CTXG onsemi
Виробник: onsemi
Description: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис NVMJST1D6N04CTXG onsemi
Description: TRENCH 6 40V LFPAK 5X7, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 10-TCPAK, Vgs(th) (Max) @ Id: 3.5V @ 130µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 314A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції NVMJST1D6N04CTXG за ціною від 71.67 грн до 245.81 грн
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NVMJST1D6N04CTXG | onsemi |
Description: TRENCH 6 40V LFPAK 5X7 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 10-TCPAK Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 314A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 5740 шт: термін постачання 21-31 дні (днів) |
|
| NVMJST1D6N04CTXG |
|
Виробник: onsemi
Description: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 5740 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 245.81 грн |
| 10+ | 151.64 грн |
| 25+ | 129.32 грн |
| 100+ | 97.66 грн |
| 250+ | 86.03 грн |
| 500+ | 78.87 грн |
| 1000+ | 71.67 грн |