NVMTS0D7N04CLTXG onsemi
Виробник: onsemi
Description: AFSM T6 40V LL NCH
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Відгуки про товар
Написати відгук
Технічний опис NVMTS0D7N04CLTXG onsemi
Description: AFSM T6 40V LL NCH, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-DFNW (8.3x8.4), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 205W (Tc), Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Інші пропозиції NVMTS0D7N04CLTXG за ціною від 403.09 грн до 786.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVMTS0D7N04CLTXG | onsemi |
Description: AFSM T6 40V LL NCH Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 205W (Tc) Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 3050 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| NVMTS0D7N04CLTXG | ON Semiconductor |
|
на замовлення 10 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||||
| NVMTS0D7N04CLTXG | ONSEMI |
Description: ONSEMI - NVMTS0D7N04CLTXG - Single N-Channel Power MOSFET 40V, 433A, 0.63m / REEL 73AC4930 tariffCode: 0 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 |
на замовлення 395 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| NVMTS0D7N04CLTXG |
|
Виробник: onsemi
Description: AFSM T6 40V LL NCH
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: AFSM T6 40V LL NCH
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 3050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 786.73 грн |
| 10+ | 649.08 грн |
| 100+ | 540.88 грн |
| 500+ | 447.88 грн |
| 1000+ | 403.09 грн |
| NVMTS0D7N04CLTXG |
|
Виробник: ON Semiconductor
на замовлення 10 шт:
термін постачання 14-28 дні (днів)
| NVMTS0D7N04CLTXG |
|
Виробник: ONSEMI
Description: ONSEMI - NVMTS0D7N04CLTXG - Single N-Channel Power MOSFET 40V, 433A, 0.63m / REEL 73AC4930
tariffCode: 0
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Description: ONSEMI - NVMTS0D7N04CLTXG - Single N-Channel Power MOSFET 40V, 433A, 0.63m / REEL 73AC4930
tariffCode: 0
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
на замовлення 395 шт:
термін постачання 21-31 дні (днів)