на замовлення 2381 шт:
термін постачання 760-769 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 838.41 грн |
| 10+ | 708.69 грн |
| 25+ | 558.13 грн |
| 100+ | 513.22 грн |
| 250+ | 482.83 грн |
| 500+ | 452.45 грн |
| 1000+ | 407.54 грн |
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Технічний опис NVMTS0D7N06CLTXG onsemi
Description: AFSM T6 60V LL NCH, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc), Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), 294.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V.
Інші пропозиції NVMTS0D7N06CLTXG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NVMTS0D7N06CLTXG | Виробник : onsemi |
 Description: AFSM T6 60V LL NCHPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 294.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
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NVMTS0D7N06CLTXG | Виробник : onsemi |
Description: AFSM T6 60V LL NCH Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 294.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
товар відсутній |