на замовлення 3000 шт:
термін постачання 133-142 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 555.32 грн |
| 10+ | 369.72 грн |
| 25+ | 308.99 грн |
| 100+ | 233.95 грн |
| 250+ | 231.00 грн |
| 500+ | 210.40 грн |
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Технічний опис NVMTS1D2N08H onsemi
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V, Power Dissipation (Max): 5W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 590µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMTS1D2N08H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVMTS1D2N08H | Виробник : ON Semiconductor |
 N-Channel Power MOSFET |
товару немає в наявності |
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| NVMTS1D2N08H | Виробник : ONSEMI |
NVMTS1D2N08H SMD N channel transistors |
товару немає в наявності |
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NVMTS1D2N08H | Виробник : onsemi |
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVMTS1D2N08H | Виробник : onsemi |
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |