| Кількість | Ціна |
|---|---|
| 1+ | 412.41 грн |
| 10+ | 282.24 грн |
| 100+ | 185.46 грн |
| 500+ | 173.61 грн |
| 1000+ | 171.52 грн |
| 3000+ | 156.88 грн |
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Технічний опис NVMTS1D5N08H onsemi
Description: MOSFET N-CH 80V 38A/273A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 273A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V, Power Dissipation (Max): 5W (Ta), 258W (Tc), Vgs(th) (Max) @ Id: 4V @ 490µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMTS1D5N08H за ціною від 197.41 грн до 422.00 грн
| Фото | Назва | Виробник | Інформація |
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NVMTS1D5N08H | Виробник : onsemi |
 Description: MOSFET N-CH 80V 38A/273A 8DFNWPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 258W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1196 шт: термін постачання 21-31 дні (днів) |
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NVMTS1D5N08H | Виробник : onsemi |
Description: MOSFET N-CH 80V 38A/273A 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 258W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |