NVMTS1D6N10MCTXG onsemi
Виробник: onsemi
Description: PTNG 100V SINGLE NCH PQFN8X8 STD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис NVMTS1D6N10MCTXG onsemi
Description: PTNG 100V SINGLE NCH PQFN8X8 STD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V, Power Dissipation (Max): 5W (Ta), 291W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMTS1D6N10MCTXG за ціною від 226.53 грн до 524.19 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVMTS1D6N10MCTXG | onsemi |
Description: PTNG 100V SINGLE NCH PQFN8X8 STD Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 291W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 6893 шт: термін постачання 21-31 дні (днів) |
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| NVMTS1D6N10MCTXG | ONN |
|
на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||
| NVMTS1D6N10MCTXG | onsemi |
MOSFETs Single N-Channel Power MOSFET 100V, 273A, 1.7mohm |
на замовлення 2302 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| NVMTS1D6N10MCTXG |
|
Виробник: onsemi
Description: PTNG 100V SINGLE NCH PQFN8X8 STD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V SINGLE NCH PQFN8X8 STD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Qualification: AEC-Q101
на замовлення 6893 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 524.19 грн |
| 10+ | 341.70 грн |
| 100+ | 249.51 грн |
| 500+ | 226.53 грн |
| NVMTS1D6N10MCTXG |
|
Виробник: ONN
на замовлення 3000 шт:
термін постачання 14-28 дні (днів)
| NVMTS1D6N10MCTXG |
|
Виробник: onsemi
MOSFETs Single N-Channel Power MOSFET 100V, 273A, 1.7mohm
MOSFETs Single N-Channel Power MOSFET 100V, 273A, 1.7mohm
на замовлення 2302 шт:
термін постачання 21-30 дні (днів)