NVMTSC1D3N08M7TXG onsemi
Виробник: onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Qualification: AEC-Q101
Grade: Automotive
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Технічний опис NVMTSC1D3N08M7TXG onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-DFNW (8.3x8.4), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5.1W (Ta), 287W (Tc), Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції NVMTSC1D3N08M7TXG за ціною від 180.44 грн до 490.91 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVMTSC1D3N08M7TXG | onsemi |
Description: MOSFET N-CH 80V 46A/348A 8DFNWPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V Power Dissipation (Max): 5.1W (Ta), 287W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 11055 шт: термін постачання 21-31 дні (днів) |
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NVMTSC1D3N08M7TXG | onsemi |
MOSFETs PT7 80V DC PQFN8*8 EXPANSION |
на замовлення 9444 шт: термін постачання 21-30 дні (днів) |
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| NVMTSC1D3N08M7TXG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 46A/348A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
Power Dissipation (Max): 5.1W (Ta), 287W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V
Qualification: AEC-Q101
на замовлення 11055 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 444.04 грн |
| 10+ | 287.48 грн |
| 100+ | 209.25 грн |
| NVMTSC1D3N08M7TXG |
![]() |
Виробник: onsemi
MOSFETs PT7 80V DC PQFN8*8 EXPANSION
MOSFETs PT7 80V DC PQFN8*8 EXPANSION
на замовлення 9444 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 490.91 грн |
| 10+ | 325.84 грн |
| 100+ | 205.10 грн |
| 500+ | 192.42 грн |
| 1000+ | 180.44 грн |


