NVMYS011N04CTWG onsemi
Виробник: onsemi
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 62.51 грн |
10+ | 52.03 грн |
100+ | 36.01 грн |
500+ | 28.24 грн |
1000+ | 24.03 грн |
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Технічний опис NVMYS011N04CTWG onsemi
Description: MOSFET N-CH 40V 13A/35A 4LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 3.8W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 20µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVMYS011N04CTWG за ціною від 20.79 грн до 67.03 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NVMYS011N04CTWG | Виробник : onsemi | MOSFET 40V 0.9Ohm 322A Single N-Channel |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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NVMYS011N04CTWG | Виробник : ON Semiconductor | Trans MOSFET N-CH 40V 13A Automotive 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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NVMYS011N04CTWG | Виробник : onsemi |
Description: MOSFET N-CH 40V 13A/35A 4LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |