NVMYS1D6N04CLTWG onsemi
на замовлення 3000 шт:
термін постачання 119-128 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 142.99 грн |
| 10+ | 127.44 грн |
| 100+ | 88.80 грн |
| 500+ | 73.02 грн |
| 1000+ | 60.33 грн |
| 3000+ | 56.14 грн |
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Технічний опис NVMYS1D6N04CLTWG onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc), Vgs(th) (Max) @ Id: 3V @ 210µA, Supplier Device Package: LFPAK4 (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMYS1D6N04CLTWG за ціною від 77.65 грн до 183.39 грн
| Фото | Назва | Виробник | Інформація |
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NVMYS1D6N04CLTWG | Виробник : onsemi |
 Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLTWG | Виробник : onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |