NVMYS1D7N04CT1G onsemi
Виробник: onsemi
Description: T6 40V SL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.6A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V SL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.6A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 51.45 грн |
| 6000+ | 47.69 грн |
| 9000+ | 46.11 грн |
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Технічний опис NVMYS1D7N04CT1G onsemi
Description: T6 40V SL AIZU SINGLE NCH LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36.6A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 107.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 210µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVMYS1D7N04CT1G за ціною від 48.95 грн до 114.1 грн
| Фото | Назва | Виробник | Інформація |
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NVMYS1D7N04CT1G | Виробник : onsemi |
Description: T6 40V SL AIZU SINGLE NCH LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.6A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| NVMYS1D7N04CT1G | Виробник : ON Semiconductor |
 Power MOSFET 40V, 1.7 m, 190 A, Single N Channel |
товар відсутній |