NVNJWS200N031LTAG onsemi

Description: MOSFET - POWER, N-CHANNEL WITH E, Packaging: Bulk, Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.3A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1.8W (Ta), 4.1W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 3-XDFNW (1x1), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V, Qualification: AEC-Q101.