NVTFS004N04CTAG onsemi
Виробник: onsemiDescription: MOSFET N-CH 40V 18A/77A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 46.07 грн |
| 3000+ | 40.99 грн |
| 4500+ | 40.23 грн |
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Технічний опис NVTFS004N04CTAG onsemi
Description: MOSFET N-CH 40V 18A/77A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V, Power Dissipation (Max): 3.2W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVTFS004N04CTAG за ціною від 36.07 грн до 153.77 грн
| Фото | Назва | Виробник | Інформація |
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NVTFS004N04CTAG | Виробник : onsemi |
MOSFETs Single N-Chn Pwr Mosfet 40V |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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NVTFS004N04CTAG | Виробник : onsemi |
Description: MOSFET N-CH 40V 18A/77A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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| NVTFS004N04CTAG | Виробник : ON Semiconductor |
Trans MOSFET N-CH 40V 18A Automotive 8-Pin WDFN EP T/R |
товару немає в наявності |
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| NVTFS004N04CTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8 Gate charge: 18nC On-state resistance: 4.9mΩ Power dissipation: 18W Gate-source voltage: ±20V Drain current: 77A Drain-source voltage: 40V Pulsed drain current: 338A Case: WDFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
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| NVTFS004N04CTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8 Gate charge: 18nC On-state resistance: 4.9mΩ Power dissipation: 18W Gate-source voltage: ±20V Drain current: 77A Drain-source voltage: 40V Pulsed drain current: 338A Case: WDFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
товару немає в наявності |