NVTFS007N08HLTAG onsemi
Виробник: onsemiDescription: MOSFET N-CHANNEL 80V 71A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.75 грн |
| 10+ | 69.71 грн |
| 100+ | 52.54 грн |
| 500+ | 39.00 грн |
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Технічний опис NVTFS007N08HLTAG onsemi
Description: MOSFET N-CHANNEL 80V 71A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V, Power Dissipation (Max): 3.3W (Ta), 79W (Tc), Vgs(th) (Max) @ Id: 3V @ 270µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVTFS007N08HLTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVTFS007N08HLTAG | Виробник : ONSEMI |
NVTFS007N08HLTAG SMD N channel transistors |
товару немає в наявності |
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NVTFS007N08HLTAG | Виробник : onsemi |
Description: MOSFET N-CHANNEL 80V 71A Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |