| Кількість | Ціна |
|---|---|
| 4+ | 98.43 грн |
| 10+ | 61.26 грн |
| 100+ | 35.35 грн |
| 500+ | 27.61 грн |
| 1000+ | 23.92 грн |
| 1500+ | 23.08 грн |
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Технічний опис NVTFS015N04CTAG onsemi
Description: MOSFET N-CH 40V 9.4A/27A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc), Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVTFS015N04CTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NVTFS015N04CTAG | Виробник : ON Semiconductor |
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на замовлення 1500 шт: термін постачання 14-28 дні (днів) |
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NVTFS015N04CTAG | Виробник : onsemi |
Description: MOSFET N-CH 40V 9.4A/27A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVTFS015N04CTAG | Виробник : onsemi |
Description: MOSFET N-CH 40V 9.4A/27A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| NVTFS015N04CTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |