NVTFS024N06CTAG onsemi
Виробник: onsemi
Description: MOSFET N-CH 60V 7A/24A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 32.60 грн |
| 3000+ | 29.01 грн |
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Технічний опис NVTFS024N06CTAG onsemi
Description: MOSFET N-CH 60V 7A/24A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V, Power Dissipation (Max): 2.5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції NVTFS024N06CTAG за ціною від 36.28 грн до 119.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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NVTFS024N06CTAG | ON Semiconductor |
Trans MOSFET N-CH 60V 7A 8-Pin WDFN EP T/R Automotive AEC-Q101 |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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NVTFS024N06CTAG | onsemi |
Description: MOSFET N-CH 60V 7A/24A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 28490 шт: термін постачання 21-31 дні (днів) |
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NVTFS024N06CTAG | onsemi |
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO |
на замовлення 1497 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| NVTFS024N06CTAG |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 60V 7A 8-Pin WDFN EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 7A 8-Pin WDFN EP T/R Automotive AEC-Q101
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 608+ | 58.10 грн |
| 1000+ | 53.59 грн |
| 10000+ | 47.78 грн |
| 100000+ | 38.60 грн |
| NVTFS024N06CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 7A/24A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 7A/24A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Qualification: AEC-Q101
на замовлення 28490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.84 грн |
| 10+ | 73.41 грн |
| 100+ | 49.08 грн |
| 500+ | 36.28 грн |
| NVTFS024N06CTAG |
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Виробник: onsemi
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
на замовлення 1497 шт:
термін постачання 21-30 дні (днів)