NVTFS040N10MCLTAG onsemi
Виробник: onsemiDescription: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 16.84 грн |
| 3000+ | 15.73 грн |
| 4500+ | 15.39 грн |
| 7500+ | 13.94 грн |
| 10500+ | 13.71 грн |
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Технічний опис NVTFS040N10MCLTAG onsemi
Description: PTNG 100V LL U8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 26µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції NVTFS040N10MCLTAG за ціною від 14.49 грн до 64.36 грн
| Фото | Назва | Виробник | Інформація |
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NVTFS040N10MCLTAG | Виробник : onsemi |
Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12162 шт: термін постачання 21-31 дні (днів) |
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NVTFS040N10MCLTAG | Виробник : onsemi |
MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm |
на замовлення 2164 шт: термін постачання 21-30 дні (днів) |
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| NVTFS040N10MCLTAG | Виробник : ON Semiconductor |
Power MOSFET, Single N-Channel |
товару немає в наявності |
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| NVTFS040N10MCLTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Pulsed drain current: 82A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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| NVTFS040N10MCLTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Pulsed drain current: 82A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |