NVTFS4C02NTAG onsemi
Виробник: onsemi
Description: MOSFET - SINGLE N-CHANNEL POWER,
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 1500+ | 66.15 грн |
| 3000+ | 62.00 грн |
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Технічний опис NVTFS4C02NTAG onsemi
Description: MOSFET - SINGLE N-CHANNEL POWER,, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 107W (Tc), Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції NVTFS4C02NTAG за ціною від 56.96 грн до 205.70 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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NVTFS4C02NTAG | onsemi |
MOSFETs MOSFET - Single N-Channel Power, N-Channel, u8FL, 30V, 162 A, 2.25 mohm |
на замовлення 1009 шт: термін постачання 21-30 дні (днів) |
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NVTFS4C02NTAG | onsemi |
Description: MOSFET - SINGLE N-CHANNEL POWER, Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 11943 шт: термін постачання 21-31 дні (днів) |
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| NVTFS4C02NTAG |
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Виробник: onsemi
MOSFETs MOSFET - Single N-Channel Power, N-Channel, u8FL, 30V, 162 A, 2.25 mohm
MOSFETs MOSFET - Single N-Channel Power, N-Channel, u8FL, 30V, 162 A, 2.25 mohm
на замовлення 1009 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 180.50 грн |
| 10+ | 122.93 грн |
| 100+ | 78.06 грн |
| 500+ | 67.16 грн |
| 1000+ | 62.87 грн |
| 1500+ | 57.67 грн |
| 3000+ | 56.96 грн |
| NVTFS4C02NTAG |
|
Виробник: onsemi
Description: MOSFET - SINGLE N-CHANNEL POWER,
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET - SINGLE N-CHANNEL POWER,
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 11943 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 205.70 грн |
| 10+ | 128.91 грн |
| 100+ | 89.08 грн |
| 500+ | 67.57 грн |