NVTFS4C02NWFTAG onsemi
на замовлення 1014 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 210.63 грн |
| 10+ | 163.74 грн |
| 100+ | 130.64 грн |
| 250+ | 120.36 грн |
| 500+ | 107.15 грн |
| 1000+ | 95.41 грн |
| 1500+ | 79.26 грн |
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Технічний опис NVTFS4C02NWFTAG onsemi
Description: MOSFET - SINGLE N-CHANNEL POWER,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc), Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V, Power Dissipation (Max): 3.2W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V.
Інші пропозиції NVTFS4C02NWFTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVTFS4C02NWFTAG | Виробник : onsemi |
 Description: MOSFET - SINGLE N-CHANNEL POWER,Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V |
товару немає в наявності |
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NVTFS4C02NWFTAG | Виробник : onsemi |
Description: MOSFET - SINGLE N-CHANNEL POWER, Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.3A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V |
товару немає в наявності |