на замовлення 4961 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 148.20 грн |
| 10+ | 96.52 грн |
| 100+ | 57.84 грн |
| 500+ | 48.54 грн |
| 1000+ | 45.75 грн |
| 2500+ | 42.27 грн |
| 5000+ | 39.62 грн |
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Технічний опис NVTFS4C06NTWG onsemi
Description: MOSFET N-CH 30V 21A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V, Power Dissipation (Max): 3.1W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V.
Інші пропозиції NVTFS4C06NTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVTFS4C06NTWG | Виробник : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8 Mounting: SMD Case: WDFN8 Polarisation: unipolar Gate charge: 26nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 37W Drain current: 71A Pulsed drain current: 367A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
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NVTFS4C06NTWG | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 71A Automotive 8-Pin WDFN EP T/R |
товару немає в наявності |
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NVTFS4C06NTWG | Виробник : onsemi |
Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
товару немає в наявності |
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NVTFS4C06NTWG | Виробник : onsemi |
Description: MOSFET N-CH 30V 21A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
товару немає в наявності |
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| NVTFS4C06NTWG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8 Mounting: SMD Case: WDFN8 Polarisation: unipolar Gate charge: 26nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 37W Drain current: 71A Pulsed drain current: 367A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |