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NVTFS4C08NTAG

NVTFS4C08NTAG onsemi

NVTFS4C08N-D.PDF
Виробник: onsemi
MOSFETs Single N-Channel Power MOSFET 30V, 55A, 5.9mohm
на замовлення 1460 шт:
термін постачання 21-30 дні (днів)
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Технічний опис NVTFS4C08NTAG onsemi

Description: MOSFET N-CH 30V 17A 8WDFN, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).

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NVTFS4C08NTAG NVTFS4C08NTAG onsemi nvtfs4c08n-d.pdf Description: MOSFET N-CH 30V 17A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NVTFS4C08NTAG NVTFS4C08NTAG onsemi nvtfs4c08n-d.pdf Description: MOSFET N-CH 30V 17A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
NVTFS4C08NTAG nvtfs4c08n-d.pdf
NVTFS4C08NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 17A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NVTFS4C08NTAG nvtfs4c08n-d.pdf
NVTFS4C08NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 17A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.