NVTFS4C13NETAG onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1500+ | 28.55 грн |
| 3000+ | 25.35 грн |
| 4500+ | 24.26 грн |
| 7500+ | 21.62 грн |
| 10500+ | 21.24 грн |
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Технічний опис NVTFS4C13NETAG onsemi
Description: MOSFET N-CH 30V 14A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V, Power Dissipation (Max): 3W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції NVTFS4C13NETAG за ціною від 13.39 грн до 100.40 грн
| Фото | Назва | Виробник | Інформація |
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NVTFS4C13NETAG | Виробник : onsemi |
MOSFETs NFET U8FL 30V 40A 9.4MOHM |
на замовлення 2220 шт: термін постачання 21-30 дні (днів) |
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NVTFS4C13NETAG | Виробник : onsemi |
Description: MOSFET N-CH 30V 14A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 84335 шт: термін постачання 21-31 дні (днів) |
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