NVTFS4C13NETAG onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
| Кількість | Ціна |
|---|---|
| 1500+ | 28.86 грн |
| 3000+ | 25.63 грн |
| 4500+ | 24.52 грн |
| 7500+ | 21.85 грн |
| 10500+ | 21.47 грн |
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Технічний опис NVTFS4C13NETAG onsemi
Description: MOSFET N-CH 30V 14A 8WDFN, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 3W (Ta), 26W (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V.
Інші пропозиції NVTFS4C13NETAG за ціною від 17.90 грн до 101.49 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVTFS4C13NETAG | onsemi |
MOSFETs NFET U8FL 30V 40A 9.4MOHM |
на замовлення 2220 шт: термін постачання 21-30 дні (днів) |
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NVTFS4C13NETAG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFN Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 3W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
на замовлення 84335 шт: термін постачання 21-31 дні (днів) |
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| NVTFS4C13NETAG |
|
Виробник: onsemi
MOSFETs NFET U8FL 30V 40A 9.4MOHM
MOSFETs NFET U8FL 30V 40A 9.4MOHM
на замовлення 2220 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.78 грн |
| 10+ | 40.45 грн |
| 100+ | 22.77 грн |
| 500+ | 21.29 грн |
| 1000+ | 17.90 грн |
| NVTFS4C13NETAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: MOSFET N-CH 30V 14A 8WDFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
на замовлення 84335 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 101.49 грн |
| 10+ | 61.47 грн |
| 100+ | 40.92 грн |
| 500+ | 30.11 грн |