Продукція > ONSEMI > NVTFS5124PLWFTWG
NVTFS5124PLWFTWG

NVTFS5124PLWFTWG onsemi


nvtfs5124pl-d.pdf Виробник: onsemi
Description: MOSFET P-CH 60V 2.4A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис NVTFS5124PLWFTWG onsemi

Description: MOSFET P-CH 60V 2.4A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V, Power Dissipation (Max): 3W (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції NVTFS5124PLWFTWG

Фото Назва Виробник Інформація Доступність
Ціна
NVTFS5124PLWFTWG NVTFS5124PLWFTWG Виробник : ON Semiconductor NVTFS5124PL-D-269246.pdf MOSFET Pwr MOSFET 60V 8A 260mOhm SGL P-CH
товару немає в наявності
В кошику  од. на суму  грн.