NVTFS6H880NLTAG ON Semiconductor

Description: MOSFET - POWER, SINGLE N-CHANNEL, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V, Qualification: AEC-Q101.