на замовлення 4083 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 80.55 грн |
| 10+ | 51.51 грн |
| 100+ | 30.23 грн |
| 500+ | 25.43 грн |
| 1000+ | 20.63 грн |
| 1500+ | 18.50 грн |
| 3000+ | 17.71 грн |
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Технічний опис NVTFS6H880NWFTAG onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVTFS6H880NWFTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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NVTFS6H880NWFTAG | Виробник : onsemi |
Description: MOSFET N-CH 80V 6.3A/21A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
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NVTFS6H880NWFTAG | Виробник : onsemi |
Description: MOSFET N-CH 80V 6.3A/21A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
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| NVTFS6H880NWFTAG | Виробник : ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 21A Pulsed drain current: 80A Power dissipation: 16W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |

