на замовлення 1280 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 148.20 грн |
| 10+ | 113.04 грн |
| 100+ | 70.85 грн |
| 500+ | 63.82 грн |
| 1000+ | 57.16 грн |
| 1500+ | 54.29 грн |
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Технічний опис NVTFWS002N04CLTAG onsemi
Description: MOSFET N-CH 40V 28A/142A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V, Power Dissipation (Max): 3.2W (Ta), 85W (Tc), Vgs(th) (Max) @ Id: 2V @ 90µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVTFWS002N04CLTAG за ціною від 64.51 грн до 152.14 грн
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NVTFWS002N04CLTAG | Виробник : onsemi |
 Description: MOSFET N-CH 40V 28A/142A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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NVTFWS002N04CLTAG | Виробник : ON Semiconductor |
Trans MOSFET N-CH 40V 28A Automotive AEC-Q101 8-Pin WDFN EP T/R |
товару немає в наявності |
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| NVTFWS002N04CLTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 142A Pulsed drain current: 706A Power dissipation: 27W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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NVTFWS002N04CLTAG | Виробник : onsemi |
Description: MOSFET N-CH 40V 28A/142A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| NVTFWS002N04CLTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 142A Pulsed drain current: 706A Power dissipation: 27W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |