NVTFWS005N04CTAG onsemi
Виробник: onsemi
Description: MOSFET N-CH 40V 17A/69A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 1500+ | 49.63 грн |
| 3000+ | 44.45 грн |
| 4500+ | 44.44 грн |
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Технічний опис NVTFWS005N04CTAG onsemi
Description: MOSFET N-CH 40V 17A/69A 8WDFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції NVTFWS005N04CTAG за ціною від 39.75 грн до 111.80 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVTFWS005N04CTAG | onsemi |
MOSFETs T6 40V SG NCH U8FL |
на замовлення 1400 шт: термін постачання 21-30 дні (днів) |
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NVTFWS005N04CTAG | onsemi |
Description: MOSFET N-CH 40V 17A/69A 8WDFN Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3.5V @ 40µA |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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| NVTFWS005N04CTAG |
|
Виробник: onsemi
MOSFETs T6 40V SG NCH U8FL
MOSFETs T6 40V SG NCH U8FL
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 109.37 грн |
| 10+ | 88.35 грн |
| 100+ | 53.50 грн |
| 500+ | 46.87 грн |
| 1000+ | 41.37 грн |
| 1500+ | 39.75 грн |
| NVTFWS005N04CTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 17A/69A 8WDFN
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Description: MOSFET N-CH 40V 17A/69A 8WDFN
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.80 грн |
| 10+ | 87.58 грн |
| 100+ | 62.14 грн |
| 500+ | 49.51 грн |