NVTFWS012P03P8ZTAG onsemi
Виробник: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 4+ | 84.84 грн |
| 10+ | 51.29 грн |
| 100+ | 33.81 грн |
| 500+ | 24.68 грн |
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Технічний опис NVTFWS012P03P8ZTAG onsemi
Description: PT8P PORTFOLIO EXPANSION, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V, Power Dissipation (Max): 2.4W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції NVTFWS012P03P8ZTAG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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NVTFWS012P03P8ZTAG | onsemi |
Description: PT8P PORTFOLIO EXPANSION Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Power Dissipation (Max): 2.4W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| NVTFWS012P03P8ZTAG |
|
Виробник: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
Qualification: AEC-Q101
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.