на замовлення 1500 шт:
термін постачання 133-142 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.25 грн |
| 10+ | 69.21 грн |
| 100+ | 46.83 грн |
| 500+ | 39.72 грн |
| 1000+ | 32.28 грн |
| 1500+ | 30.42 грн |
| 3000+ | 28.96 грн |
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Технічний опис NVTFWS030N06CTAG onsemi
Description: MOSFET N-CH 60V 6A/19A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V, Power Dissipation (Max): 2.5W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 4V @ 13µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVTFWS030N06CTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NVTFWS030N06CTAG | Виробник : ON Semiconductor |
 Power MOSFET, Single, N Channel, 8FL, 60 V, 29.7 m, 19 A |
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NVTFWS030N06CTAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
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NVTFWS030N06CTAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
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