на замовлення 8945 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.31 грн |
| 10+ | 54.51 грн |
| 100+ | 32.38 грн |
| 500+ | 27.04 грн |
| 1000+ | 22.97 грн |
| 1500+ | 20.83 грн |
| 3000+ | 19.29 грн |
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Технічний опис NVTFWS052P04M8LTAG onsemi
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 95µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V.
Інші пропозиції NVTFWS052P04M8LTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
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NVTFWS052P04M8LTAG | Виробник : onsemi |
 Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V |
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NVTFWS052P04M8LTAG | Виробник : onsemi |
Description: MOSFET P-CH 40V 4.7A/13.2A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 95µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V |
товар відсутній |