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NVTYS002N03CLTWG

NVTYS002N03CLTWG onsemi

nvtys002n03cl-d.pdf
Виробник: onsemi
Description: T6 30V N-CH LL IN LFPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2697 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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Технічний опис NVTYS002N03CLTWG onsemi

Description: T6 30V N-CH LL IN LFPAK33, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2697 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 2.25mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).

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NVTYS002N03CLTWG NVTYS002N03CLTWG onsemi nvtys002n03cl-d.pdf Description: T6 30V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2697 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVTYS002N03CLTWG onsemi nvtys002n03cl-d.pdf MOSFETs MOSFET - Power, Single, N-Channel
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVTYS002N03CLTWG nvtys002n03cl-d.pdf
NVTYS002N03CLTWG
Виробник: onsemi
Description: T6 30V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2697 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVTYS002N03CLTWG nvtys002n03cl-d.pdf
Виробник: onsemi
MOSFETs MOSFET - Power, Single, N-Channel
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.