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NVTYS004N04CLTWG ON Semiconductor

Виробник: ON Semiconductor
40V N-Channel Mosfet

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Технічний опис NVTYS004N04CLTWG ON Semiconductor

Description: T6 40V N-CH LL IN LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, Power Dissipation (Max): 3.2W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції NVTYS004N04CLTWG

Назва	Виробник	Інформація	Доступність	Ціна
NVTYS004N04CLTWG	Виробник : onsemi	Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
NVTYS004N04CLTWG	Виробник : onsemi	Description: T6 40V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
NVTYS004N04CLTWG	Виробник : onsemi	MOSFETs MOSFET - Power, Single, N-Channel, 40 V, 4.3 mohm, 85 A	товару немає в наявності	В кошику од. на суму грн.
NVTYS004N04CLTWG	Виробник : ONSEMI	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 84A Pulsed drain current: 371A Power dissipation: 27W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.