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NVTYS005N06CLTWG

NVTYS005N06CLTWG onsemi

nvtys005n06cl-d.pdf
Виробник: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
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Технічний опис NVTYS005N06CLTWG onsemi

Description: T6 60V N-CH LL IN LFPAK33, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 2.2V @ 75µA, Power Dissipation (Max): 3.2W (Ta), 76W (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).

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NVTYS005N06CLTWG NVTYS005N06CLTWG onsemi nvtys005n06cl-d.pdf Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVTYS005N06CLTWG onsemi nvtys005n06cl-d.pdf MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE
товару немає в наявності
В кошику  од. на суму  грн.
NVTYS005N06CLTWG nvtys005n06cl-d.pdf
NVTYS005N06CLTWG
Виробник: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVTYS005N06CLTWG nvtys005n06cl-d.pdf
Виробник: onsemi
MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE
товару немає в наявності
В кошику  од. на суму  грн.